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High-performance phase and amplitude modulators based on GaInAsP stepped quantum wells

机译:基于GAIAPAP的高性能阶段和幅度调制器阶梯式量子阱

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Enhanced electrooptic coefficient of GaInAsP three-step quantum wells (3SQW) for high power electrorefraction modulator applications is reported. Measured electrooptic coefficient of the 3SQW is nearly three times higher than the conventional rectangular quantum well (RQW) at lambda=1.55 um. Higher electrooptic effect, combined with a low optical absorption coefficient α<1 cm-1 in the 3SQW increased the modulator figure of merit by nearly 53 times, and decreased the power consumption by nearly one order of magnitude compared with a conventional RQW design.
机译:报道了高功率电渗漏调制器应用的增强电光系数(3SQW)的增强电光系数。 3SQW的测量电光系数比Lambda =1.55μm的传统矩形量子阱(RQW)高几乎三倍。较高的电光效果,与3SQW中的低光学吸收系数α<1cm-1相结合,增加了近53次的调制器的优点,并与传统的RQW设计相比,通过近一个级别的功耗降低了近一个级。

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