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InGaAsP/InP quantum-well electrorefractive modulators with sub-volt Vpi

机译：InGaASP / InP量子孔电晕调制与子伏VPI

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Advanced analog-optical sensor, signal processing and communication systems could benefit significantly from wideband (DC to > 50 GHz) optical modulators having both low half-wave voltage (Vpi) and low optical insertion loss. An important figure-of-merit for modulators used in analog applications is Tmax/Vpi, where Tmax is the optical transmission of the modulator when biased for maximum transmission. Candidate electro-optic materials for realizing these modulators include lithium niobate (LiNbO3), polymers, and semiconductors, each of which has its own set of advantages and disadvantages. In this paper, we report the development of 1.5-um-wavelength Mach-Zehnder modulators utilizing the electrorefractive effect in InGaAsP/InP symmetric, uncoupled semiconductor quantum-wells. Modulators with 1-cm-long, lumped-element electrodes are found to have a push-pull Vpi of 0.9V (Vpi*L = 9 V-mm) and 18-dB fiber-to-fiber insertion loss (Tmax/Vpi = 0.018). Fabry-Perot cutback measurements reveal a waveguide propagation loss of 7 dB/cm and a waveguide-to-fiber coupling loss of 5 dB/facet. The relatively high propagation loss results from a combination of below-bandedge absorption and scattering due to waveguide-sidewall roughness. Analyses show that most of the coupling loss can be eliminated though the use of monolithically integrated inverted-taper optical-mode converters, thereby allowing these modulators to exceed the performance of commercial LiNbO3 modulators (Tmax/Vpi ~ 0.1). We also report the analog modulation characteristics of these modulators.
机译：先进的模拟光学传感器，信号处理和通信系统可以从宽带（DC至> 50GHz）光调制器显着受益于具有低半波电压（VPI）和低光插入损耗。模拟应用中使用的调制器的重要型号是TMAX / VPI，其中Tmax是在偏置最大传输时调制器的光学传输。用于实现这些调节剂的候选电光材料包括铌酸锂（LINBO 3），聚合物和半导体，每个聚合物和半导体都有其自身的优点和缺点。在本文中，我们报道了利用InGaASP / INP对称，非偶象半导体量子阱的电流效果的电流效应的开发。发现具有1厘米长的集成元件电极的调制器具有0.9V（VPI * L = 9 V-MM）和18dB光纤到光纤插入损耗的推拉VPI（TMAX / VPI = 0.018）。 Fabry-Perot削减测量显示波导传播损耗为7dB / cm，波导到光纤耦合损耗为5dB /张。由于波导 - 侧壁粗糙度，与下面的BandEde吸收和散射的组合相对高的传播损失。分析表明，尽管使用单片集成的倒锥光模式转换器，但是可以消除大多数耦合损耗，从而允许这些调制器超过商业LINBO3调制器的性能（TMAX / VPI〜0.1）。我们还报告了这些调制器的模拟调制特征。

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