The method involves forming two silicon layers (112, 114) and two insulating layers (110a, 120a) alternately. A contact hole (122) is formed to extend through the two insulating layers, where the contact hole exposes an upper surface of the silicon layer (112) and a sidewall of the silicon layer (114). A preliminary ohmic contact layer (134) is non-conformally depositing in the contact hole, and another preliminary ohmic contact layer (140) is conformally depositing in the contact hole. An independent claim is also included for a semiconductor device comprising an active semiconductor structure.
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