首页> 外国专利> METHOD FOR PRODUCING THE ELECTRICAL CONTACTS OF A SEMICONDUCTOR DEVICE, SUCH AS A PHOTOVOLTAIC CELL, COMPRISING STEPS INVOLVING THE LASER ETCHING AND WET ETCHING OF DIELECTRIC LAYERS

METHOD FOR PRODUCING THE ELECTRICAL CONTACTS OF A SEMICONDUCTOR DEVICE, SUCH AS A PHOTOVOLTAIC CELL, COMPRISING STEPS INVOLVING THE LASER ETCHING AND WET ETCHING OF DIELECTRIC LAYERS

机译:用于制造作为光伏电池的半导体设备的电触点的方法,该方法包括涉及介电层的激光刻蚀和湿法刻蚀的步骤

摘要

The invention relates to a method for producing an electrical contact (114) of a semiconductor device (100), such as a contact of the front face of a photovoltaic cell, said method comprising the following steps: depositing an electrically conductive and optically transparent layer (104) on a face (102) of the device; depositing first and second dielectric layers (106, 108) on the aforementioned layer (104), in which the second dielectric layer (108) can be selectively etched by laser; performing selective laser etching on the second dielectric layer (108), such as to form a first opening (110); producing a second opening (112), aligned with the first opening (110), in the first dielectric layer (106) by means of wet etching; and, subsequently, performing the following steps in an alternating manner, namely: etching the second dielectric layer (108); and depositing at least one electrically conductive material (114) on the electrically conductive and optically transparent layer (104) through the second opening (112), or the steps of depositing an electrically conductive material (114) on the electrically conductive and optically transparent layer (104) through the second opening (112), such that portions of the electrically conductive material (114) are deposited on the second dielectric layer (108) around the first opening (110); and etching portions of the second dielectric layer (108) that are not covered by the portions of electrically conductive material (114).
机译:本发明涉及一种用于制造半导体器件(100)的电触点(114),例如光伏电池的正面的触点的方法,所述方法包括以下步骤:沉积导电且光学透明的层(104)在设备的表面(102)上;在上述层(104)上沉积第一和第二介电层(106、108),其中第二介电层(108)可以通过激光选择性地蚀刻。对第二介电层(108)进行选择性激光刻蚀,以形成第一开口(110);通过湿法刻蚀在第一介电层(106)中产生与第一开口(110)对准的第二开口(112);随后,交替进行以下步骤,即:蚀刻第二介电层(108);通过第二开口(112)在导电和光学透明层(104)上沉积至少一种导电材料(114),或者在导电和光学透明层上沉积导电材料(114)的步骤(104)穿过第二开口(112),使得部分导电材料(114)沉积在第一开口(110)周围的第二介电层(108)上;蚀刻第二介电层(108)的未被导电材料(114)的部分覆盖的部分。

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