Microfabrication of WO3-Based Microelectrochemical Devices

机译：基于WO3的微电化学装置的微细加工

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A new photolithographic process for the patterning of Tungsten trioxide is reported. A layer of RF sputtered polycrystalline WO3 can be patterned by a combination of photolithographic and dry etching processes to selectively cover a fraction of eight Platinum microelectrodes each approx. 50 micrometers long, 2 micrometers wide, and 0.3 micrometers thick and spaced 1.2 micrometers apart. The modified microelectrode arrays were characterized by electrochemistry, by surface profilometry, and by scanning electron microscopy. A pair of microelectrodes connected by WO3 comprises a microelectrochemical transistor with pH-dependent electrical characteristics based on the pH and potential dependent conductivity of WO3 associated with the reversible electrochemical reaction WO3 + nH(+) + ne(-) yields HnWo3. (AW)

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Schloh, M. O.; Leventis, N.; Wrighton, M. S.;
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年度 1989
页码 p.1-20
总页数 20
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Etching; Microminiaturization; Oxides; Photolithography; Tungsten compounds; Transistors; Conductivity; Dry materials; Electrical properties; Electrochemistry; Electrodes; Electron microscopy; Electronic scanners; Fabrication; Ph factor; Platinum; Profilometers; Su;

机译：蚀刻;微小型化;氧化物;光刻;钨化合物;晶体管;电导率;干燥材料;电性能;电化学;电极;电子显微镜;电子扫描仪;制造; ph因子;铂;表面光度仪; su;

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8. Microfabrication of WO3-Based Microelectrochemical Devices. [R] . Schloh, M. O., Leventis, N., Wrighton, M. S. 1989

机译：基于WO3的微电化学装置的微细加工。

Microfabrication of WO3-Based Microelectrochemical Devices

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