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首页> 外文期刊>Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms >Compositional analysis of silicon nitride films on Si and GaAs by backscattering spectrometry and nuclear resonance reaction analysis
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Compositional analysis of silicon nitride films on Si and GaAs by backscattering spectrometry and nuclear resonance reaction analysis

机译：背散射光谱法和核共振反应分析法分析Si和GaAs上氮化硅膜的成分

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摘要

This paper describes the application of proton and α-backscattering spectrometry for the determination of atomic ratio of Si to N in 1100-5000 A silicon nitride films on Si and GaAs. The conventional α-Rutherford backscattering spectrometry is suitable for the analysis of films on Si; it is rather inadequate for films on GaAs due to higher background from the substrate. It is shown that these films can be analysed by ~(14)N(α,α)~(14)N scattering with 3.5 MeV α-par-ticles. Proton elastic scattering with enhanced cross sections for ~(28)Si(p,p)~(28)Si and ~(14)N(p,p)~(14)N scatterings, is also suitable for analysing films on GaAs. However, the analysis of films on Si by this technique is difficult due to interferences between the signals of Si from the film and the substrate. In addition, the hydrogen content in films is determined by ~1H(~(19)F,αγ)~(16)O nuclear reaction analysis using the resonance at 6.4 MeV. The combination of backscattering spectrometry with nuclear reaction analysis provides compositional analysis of ternary Si_(1-(x+y))N_xH_y films.
机译：本文描述了质子和α反向散射光谱法在确定1100-5000 A Si和GaAs上氮化硅膜中Si与N原子比方面的应用。常规的α-卢瑟福背散射光谱法适用于分析Si上的薄膜。由于来自衬底的较高背景，这对于在GaAs上的薄膜来说是远远不够的。结果表明，这些膜可以通过〜（14）N（α，α）〜（14）N与3.5 MeVα-粒子的散射来分析。对于〜（28）Si（p，p）〜（28）Si和〜（14）N（p，p）〜（14）N散射具有增强截面的质子弹性散射，也适用于分析GaAs上的薄膜。然而，由于来自膜和衬底的Si的信号之间的干扰，通过这种技术对Si上的膜进行分析是困难的。另外，通过〜1H（〜（19）F，αγ）〜（16）O核反应分析，使用6.4 MeV的共振来确定薄膜中的氢含量。反向散射光谱法与核反应分析的结合提供了三元Si_（1-（x + y））N_xH_y膜的成分分析。

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