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首页> 外文期刊>Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms >Mathematical modeling for the composition prediction of compound films grown by ion-assisted deposition technique and its application to TiN_x film
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Mathematical modeling for the composition prediction of compound films grown by ion-assisted deposition technique and its application to TiN_x film

机译:离子辅助沉积技术制备复合膜成分预测的数学模型及其在TiN_x膜中的应用

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摘要

A simple general model has been formulated to explain the composition of compound films during growth simultaneous with ion bombardment. The variables in this model are (a) the sticking probability of the background residual reactive gas in the film, (b) an ion-enhanced sticking probability of these reactive gases arising from ion-enhanced adsorption and mixing and (c) ion implantation of the energetic ions impinging on the growing film. Preferential sputtering of various components in the film is also taken into account. The model is shown to be successful in explaining the experimental variations in the composition of TiN_x films produced by ion-assisted growth.
机译:已经建立了一个简单的通用模型来解释离子轰击同时生长期间化合物膜的组成。该模型中的变量是(a)薄膜中本底残留的反应性气体的粘附概率,(b)这些因离子增强的吸附和混合作用以及(c)离子注入产生的反应性气体的离子粘附性。高能离子撞击正在生长的薄膜。还考虑了膜中各种组分的优先溅射。该模型显示出成功的解释了由离子辅助生长产生的TiN_x膜组成的实验变化。

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