Efficiency of formation of radiation defects in silicon upon implantation of silicon and phosphorus ions

M. Jadan; A.R. Chelyadinskii; V.Yu. Yavid

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Efficiency of formation of radiation defects in silicon upon implantation of silicon and phosphorus ions

机译：注入硅和磷离子后硅中形成辐射缺陷的效率

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摘要

Accumulation and annealing of radiation defects in silicon and in the heavily phosphorus doped silicon layers implanted with Si~+ or P~+ ions have been studied by the X-ray diffraction method. The observed differences in the introduction rates of stable radiation defects are due to the differences between the intensities of annihilation processes determined by charge states of defects.

机译：通过X射线衍射方法研究了硅以及注入Si〜+或P〜+离子的高磷掺杂硅层中的辐射缺陷的累积和退火。观察到的稳定辐射缺陷引入速率的差异是由于缺陷电荷状态决定的an灭过程强度之间的差异。

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来源
《Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms》 |2004年第4期|p.516-520|共5页
作者
M. Jadan; A.R. Chelyadinskii; V.Yu. Yavid;
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作者单位

Department of Physics, Byelorussian State University, pr. Skorina, 4, 220050 Minsk, Belarus;

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原文格式 PDF
正文语种 eng
中图分类原子核物理学、高能物理学;原子能技术;
关键词
silicon; ion implantation; radiation defects;

机译：硅;离子注入;辐射缺陷;

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专利

1. Formation of radiation defects in silicon at high-energy implantation [J] . Brinkevich DI, Odzhaev VB, Prosolovich VS, Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology . 2005,第2a4期

机译：高能注入时硅中辐射缺陷的形成
2. Formation of dendritic crystal structures in thin silicon films on silicon dioxide by carbon ion implantation and high intensity large area flash lamp irradiation [J] . M. Voelskow, R. Endler, T. Schumann, Journal of Crystal Growth . 2014,第feba15期

机译：通过碳离子注入和高强度大面积闪光灯照射在二氧化硅薄膜上形成树枝状晶体结构
3. Specific features of formation of radiation defects in the silicon layer in "silicon-on-insulator" structures [J] . Shcherbachev K.D., Bublik V.T., Mordkovich V.N., Semiconductors . 2011,第6期

机译：在“绝缘体上硅”结构的硅层中形成辐射缺陷的特定特征
4. Comparison of External Gettering Efficiency of Phosphorus Diffusion, Aluminium-Silicon Alloying and Helium Implantation in Silicon Wafers [C] . N. Gay, S. Martinuzzi Proceedings of the 7th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology October 5-10, 1997 Spa, Belgium . 1997

机译：硅晶片中磷扩散，铝硅合金化和氦注入的外部吸气效率比较
5. Phosphorus-defect interactions during thermal annealing of ion implanted silicon. [D] . Keys, Patrick Henry. 2001

机译：离子注入硅的热退火过程中的磷缺陷相互作用。
6. Toward Defect-Free Doping by Self-Assembled MolecularMonolayers: The Evolution of Interstitial Carbon-Related Defects inPhosphorus-Doped Silicon [O] . Xuejiao Gao, Bin Guan, ⊥, 2019

机译：通过自组装分子实现无缺陷掺杂单层：间隙中碳相关缺陷的演变。磷掺杂硅
7. Formation of the buried insulating SixNy layer in the region of radiation defects created by hydrogen implantation in silicon wafer [O] . A. V. Frantskevich, A. Saad, A. K. Fedotov, 2015

机译：在硅晶片中通过氢注入产生的辐射缺陷区域中形成埋入的绝缘sixNy层

Efficiency of formation of radiation defects in silicon upon implantation of silicon and phosphorus ions

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