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首页> 外文期刊>Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms >Electron beam and gamma irradiation effects on amorphous chalcogenide SbSe_(2.5) films
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Electron beam and gamma irradiation effects on amorphous chalcogenide SbSe_(2.5) films

机译：电子束和γ射线辐照对非晶硫族化物SbSe_（2.5）薄膜的影响

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摘要

In this article, the effects of the electron-beam and gamma irradiation on the features of chalcogenide SbSe_(2.5) films have been studied. The films showed an amorphous to partially crystalline phase at doses ranging from 3 to 12 kGy. Optical absorption measurements have been performed where the results reflected a great dependence of the fundamental absorption edge on the irradiation dose. The radiation induced allowed indirect transition with a decrease in the energy gap as the dose increased. The decrease in the gap was a little higher for electron than that for gamma irradiation. This behavior is believed to be associated with the generation of excess of electronic localized states. The change in the optical gap may be explained in terms of diminution of disorder, defects in the structural bonding and crystal field mechanism. Moreover, the characteristic features of the irradiated films have been studied using scanning electron microscope. SEM observation showed a grain growth on the film surface through which the surface morphology has been demonstrated. Accordingly, a structural model concerning the configurational coordinate has been proposed, based on the assuming tri-coordinated Sb atoms and di-coordinated Se atoms, that confirmed the information obtained from the scanning electron microscope. So, Sb-Se bonds in pyramidal form of molecules with excess of Se rings have been formed as a result of irradiation process.
机译：本文研究了电子束和伽马射线辐照对硫族化物SbSe_（2.5）薄膜特征的影响。膜以3至12kGy的剂量显示无定形至部分结晶相。已经进行了光吸收测量，其中结果反映了基本吸收边缘对辐照剂量的极大依赖性。随着剂量的增加，诱导的辐射允许间接跃迁，并且能隙减小。对于电子来说，间隙的减小要比对伽马辐照的间隙的减小高一些。该行为被认为与过量电子局部状态的产生有关。光学间隙的变化可以用无序的减小，结构键合的缺陷和晶体场机制来解释。此外，已经使用扫描电子显微镜研究了被辐照膜的特征。 SEM观察显示出膜表面上的晶粒生长，通过该晶粒生长已经证明了表面形态。因此，基于假设三配位的Sb原子和双配位的Se原子，提出了一种与构型坐标有关的结构模型，该结构模型确认了从扫描电子显微镜获得的信息。因此，由于辐照过程，形成了具有过量Se环的分子锥体形式的Sb-Se键。

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