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首页> 外文期刊>Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms >Depth profiles of MeV heavy ions implanted into Si and lithium triborate
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Depth profiles of MeV heavy ions implanted into Si and lithium triborate

机译：注入Si和三硼酸锂的MeV重离子的深度分布

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摘要

MeV Cu~+ and Ni~+ ions were implanted into Si crystal and lithium triborate. The depth profiles of implanted Cu~+ and Ni~+ ions into Si and lithium triborate were measured by secondary ion mass spectrometry (SIMS). Mean projected range and range straggling extracted are compared with calculated values based on different versions of transport of ions in matter: TRIM'90, TRIM'98 and SRIM 2003. The results show that TRIM'90 has predicted well the experimental data of mean projected range and range straggling for MeV Cu~+ ions implanted into Si, the maximum differences between measured and calculated values are within 4%, but for the case of 2.0 MeV Ni~+ ions implanted into lithium triborate, the experimental value is significantly different from the calculated one based on TRIM'90.
机译：将MeV Cu〜+和Ni〜+离子注入到Si晶体和三硼酸锂中。用二次离子质谱法（SIMS）测量了Cu〜+和Ni〜+离子注入Si和三硼酸锂中的深度分布。将平均投影范围和提取的距离散布与基于物质中离子迁移的不同版本的计算值进行比较：TRIM'90，TRIM'98和SRIM2003。结果表明TRIM'90很好地预测了平均投影的实验数据注入Si的MeV Cu〜+离子的范围和跨度，测量值与计算值之间的最大差在4％以内，但是对于注入2.0 MeV Ni〜+离子的三硼酸锂，实验值与根据TRIM'90计算得出的结果。

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