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首页> 外文期刊>Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms >Electronic stopping powers for fluorine ions in ~(19)F~+-implanted silver gallium diselenide
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Electronic stopping powers for fluorine ions in ~(19)F~+-implanted silver gallium diselenide

机译：〜（19）F〜+注入二硒化银镓中氟离子的电子停止能力

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摘要

Electronic stopping powers for 80-350 keV ~(19)F ions in AgGaSe_2 were obtained by range measurement. Depth profiles of ~(19)F in AgGaSe_2 were measured by using the ~(19)F(p,αγ)~(16)O resonant nuclear reaction at E_R = 872.1 keV. A proper convolution calculation method was used to extract the true distribution of fluorine from the experimental excitation yield curves. The electronic stopping powers were derived through fitting the projected range distributions, simulated by using the TRIM/XLL code, to the experimentally measured range distributions. The electronic stopping cross-sections were compared with those obtained from Monte Carlo simulation codes.
机译：通过距离测量获得了AgGaSe_2中80-350 keV〜（19）F离子的电子停止功率。通过在E_R = 872.1 keV下使用〜（19）F（p，αγ）〜（16）O共振核反应，测量了AgGaSe_2中〜（19）F的深度分布。使用适当的卷积计算方法从实验的激发产率曲线中提取出氟的真实分布。通过将投影范围分布（使用TRIM / XLL代码模拟）拟合到实验测得的范围分布，可以得出电子制动力。将电子停止横截面与从蒙特卡洛模拟代码获得的横截面进行比较。

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