...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms >Implantation of P ions in SiO_2 layers with embedded Si nanocrystals
【24h】

Implantation of P ions in SiO_2 layers with embedded Si nanocrystals

机译：嵌入Si纳米晶体的SiO_2层中的P离子注入

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The effect of 10~(13)-10~(16) cm~(-2) P ions implantation and of subsequent annealing on Si nanocrystals (Si-ncs), formed preliminarily in SiO_2 layers by the ion-beam synthesis, has been studied. Photoluminescence (PL), Raman spectroscopy, high resolution electron microscopy (HREM), X-Ray Photoelectron Spectroscopy (XPS) and optical absorption were used for characterizations. The low fluence implantations have shown even individual displacements in Si-ncs quench their PL. Restoration of PL from partly damaged Si-ncs proceeds at annealing less than 1000℃. In the low fluence implanted and annealed samples an increased Si-ncs PL has been found and ascribed to the radiation-induced shock crystallization of stressed Si nanoprecipitates. Annealing at temperatures under 1000℃ are inefficient when P ion fluences exceed 10~(14) cm~(-2), thus becoming capable to amorphize Si-ncs. High crystallization temperature of the amorphized Si-ncs is attributed to a counteraction of their shell layers. After implantation of the highest P fluences an enhanced recovery of PL was found from P concentration over 0.1 at.%. Raman spectroscopy and HREM showed an increased Si-ncs number in such layers. The effect resembles the impurity-enhanced crystallization, known for heavily doped bulk Si. This effect, along with the data obtained by XPS, is considered as an indication P atoms are really present inside the Si-ncs. However, no evidence of free electrons appearance has been observed. The fact is explained by an increased interaction of electrons with the donor nuclei in Si-ncs.
机译：已经进行了10〜（13）-10〜（16）cm〜（-2）P离子注入以及随后的退火对通过离子束合成在SiO_2层中初步形成的Si纳米晶体（Si-ncs）的影响。研究。表征使用了光致发光（PL），拉曼光谱，高分辨率电子显微镜（HREM），X射线光电子能谱（XPS）和光吸收。低注量注入表明，即使Si-ncs中的单个位移也可以淬灭其PL。从部分损坏的Si-ncs恢复PL的退火温度低于1000℃。在低能量注入和退火的样品中，发现了Si-ncs PL增加，并归因于受应力的Si纳米沉淀物的辐射诱发的冲击结晶。当P离子通量超过10〜（14）cm〜（-2）时，在1000℃以下的温度退火效率低下，从而使Si-ncs非晶化。非晶Si-ncs的高结晶温度归因于它们的壳层的反作用。注入最高的P通量后，从P浓度超过0.1 at。％发现PL的回收率提高。拉曼光谱法和HREM表明在这些层中Si-ncs数增加。该效果类似于以重掺杂块状Si闻名的增强杂质的结晶。该效应与XPS获得的数据一起被认为是表明Si原子内部确实存在P原子的指示。但是，没有观察到自由电子出现的迹象。电子与Si-ncs中供体核的相互作用增加解释了这一事实。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号