Ion beam induced intermixing of interface structures in W/Si multilayers

M.J.H. Kessels; J. Verhoeven; A.E. Yakshin; F.D. Tichelaar; F. Bijkerk

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Ion beam induced intermixing of interface structures in W/Si multilayers

机译：W / Si多层膜中离子束诱导的界面结构混合

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The impact of energetic ions during fabrication of W/Si multilayers may result in interface layers with a gradually changing concentration, notably in the W-on-Si interface layer. This process may be employed to deliberately form a multilayer system with a graded refractive index within each period, in principle allowing an adjustment of the optical, wavelength-selective properties of the multilayer system. We also have given a first demonstration of a new method based on a combination of high-resolution TEM image analysis and grazing incidence X-ray reflectivity analysis to determine the in-depth density profile of a multilayer structure.

机译：在W / Si多层制造期间，高能离子的影响可能导致界面层的浓度逐渐变化，特别是在W-Si界面层中。可以采用该方法有意地形成在每个周期内具有渐变折射率的多层系统，原则上允许调节多层系统的光学，波长选择特性。我们还给出了一种新方法的首次演示，该方法基于高分辨率TEM图像分析和掠入射X射线反射率分析相结合来确定多层结构的深度密度分布。

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来源
《Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms》 |2004年第4期|p.484-490|共7页
作者
M.J.H. Kessels; J. Verhoeven; A.E. Yakshin; F.D. Tichelaar; F. Bijkerk;
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作者单位

FOM Institute for Plasma Physics Rijnhuizen, www.rijnh.nl, P.O. Box 1207, 3430 BE Nieuwegein, The Netherlands;

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原文格式 PDF
正文语种 eng
中图分类原子核物理学、高能物理学;原子能技术;
关键词
multilayers; tungsten; silicon; reflectometry; electron microscopy; thin films; evaporation; ion bombardment; interfaces;

机译：多层;钨;硅;反射法;电子显微镜;薄膜;蒸发;离子轰击;界面;

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1. Kinetics of Surface Processes and Mechanisms of Alloy Intermixing Near Interfaces in Si(Ge)/Si_(1-x)Ge_x Structures Grown by Molecular Beam Epitaxy with Combined Sources [J] . L. K. Orlov, N. L. Ivina Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2002,第0期

机译：结合源的分子束外延生长Si（Ge）/ Si_（1-x）Ge_x结构中合金界面附近合金的表面过程动力学及机理
2. Intermixing and phase transformations in Al/Ti multilayer system induced by picosecond laser beam [J] . Perusko D., Kovac J., Petrovic S., Thin Solid Films . 2015,第SEPa30PTaB期

机译：皮秒激光束在Al / Ti多层系统中引起的混合和相变
3. Ion beam sputter deposited W/Si multilayers: Influence of re-sputtering on the interface structure and structure modification at ultra short periods [J] . S.K. Rai, Arijeet Das, A.K. Srivastava, Applied Surface Science . 2011,第24期

机译：离子束溅射沉积的W / Si多层膜：超溅射对超短时间界面结构和结构改性的影响
4. Kinetics of surface processes arising in hydride pyrolysis and the problem of alloy intermixing near interfaces in Si(Ge)/Si/sub 1-x/Ge/sub x/ structures grown by gas source molecular beam epitaxy [C] . Orlov, L.K., Ivina, . 2000

机译：氢化物热解中产生的表面过程的动力学以及气体源分子束外延生长的Si（Ge）/ Si / sub 1-x / Ge / sub x /结构中界面附近的合金互混问题
5. Electron beam induced conductivity effect of polymer resists and charging induced electron beam deflection simulation in electron beam lithography. [D] . Hwu, Justin Jia-Jen. 2000

机译：聚合物抗蚀剂的电子束感应电导率效应和电子束光刻中的电荷感应电子束偏转模拟。
6. Ion-Beam-Induced Atomic Mixing in Ge Si and SiGe Studied by Means of Isotope Multilayer Structures [O] . Manuel Radek, Bartosz Liedke, Bernd Schmidt, 2017

机译：用同位素多层结构研究GeSi和SiGe中离子束诱导的原子混合
7. Effect of interface intermixing on giant magnetoresistance in NiFe/Cu and Co/NiFe/Co/Cu multilayers [O] . L. C. C. M. Nagamine, A. Biondo, L. G. Pereira, 2003

机译：界面混合对NIFE / CU和CO / NIFE / CO / CU / CU / CU / CU / CU / CU / CU / CU / Cu / Cu / Cu / Cu / Cu / Cu Multidayers的影响

Ion beam induced intermixing of interface structures in W/Si multilayers

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