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首页> 外文期刊>Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms >Low energy Ar~+ ion beam induced kinetic roughening of thin Pt films on a Si substrate
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Low energy Ar~+ ion beam induced kinetic roughening of thin Pt films on a Si substrate

机译:低能Ar〜+离子束诱导Si衬底上Pt薄膜的动力学粗糙化

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A 30 nm Pt thin film evaporated onto a Si wafer was sputtered by 9.7 keV oblique Ar~+ bombardment at various ion fluences. The evolution of the modified sputtered films was monitored by atomic force microscopy (AFM) and high resolution scanning electron microscopy (HRSEM). The most interesting observation was the formation of mound-like structures on the metal surface. Morphological data were quantitatively analysed within the framework of the dynamic scaling theory. Analyses of the height-height correlation function for different ion fluences yield roughness exponents α in the range 0.65-0.87, while the root-mean-square roughness amplitude w evolves with the ion fluence φ as a power law w ∝ φ~β, with the growth exponent, β = 0.36. The results are discussed in terms of the existing continuum models developed for the ion sputtering process.
机译:蒸发到Si晶片上的30 nm Pt薄膜在各种离子注量下通过9.7 keV斜向Ar〜+轰击溅射。通过原子力显微镜(AFM)和高分辨率扫描电子显微镜(HRSEM)监控改性溅射膜的演变。最有趣的发现是在金属表面上形成了丘状结构。在动态缩放理论的框架内对形态学数据进行了定量分析。对不同离子通量的高度-高度相关函数进行分析得出粗糙度指数α的范围为0.65-0.87,而均方根粗糙度幅值w以离子通量φ为幂律w ∝φ〜β演化,且生长指数,β= 0.36。将根据为离子溅射工艺开发的现有连续模型来讨论结果。

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