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首页> 外文期刊>Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms >Three-dimensional micromachining of silicon using a nuclear microprobe
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Three-dimensional micromachining of silicon using a nuclear microprobe

机译:使用核微探针对硅进行三维微加工

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摘要

We describe a novel technique for silicon microfabrication based on energetic mega-electron-volt (MeV) helium irradiation and subsequent electrochemical etching. The ion-induced damage in the irradiated regions slows down the porous silicon formation during electrochemical etching, producing a raised microstructure after cleaning in diluted potassium hydroxide solution. The thickness of the porous silicon layer formed depends on the accumulated fluence at each scan point. A relationship between the irradiated fluence and feature height is investigated on a p-type [100] silicon with a resistivity of 0.03 Ω cm using focused 2 MeV helium beam. We use this relationship to micromachine multilevel structures with a single focused helium beam energy.
机译:我们描述了一种基于高能兆电子伏(MeV)氦辐照和随后的电化学蚀刻的硅微细加工新技术。辐照区中离子引起的损伤减慢了电化学蚀刻过程中多孔硅的形成,在稀释的氢氧化钾溶液中清洗后产生了升高的微观结构。形成的多孔硅层的厚度取决于在每个扫描点处的累积通量。使用聚焦的2 MeV氦束,在电阻率为0.03Ωcm的p型[100]硅上研究了辐照通量与特征高度之间的关系。我们将这种关系用于具有单个聚焦氦束能量的微机多级结构。

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