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首页> 外文期刊>Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms >Accurate Monte Carlo simulation of fluorine and BF_2 ion implantation into crystalline silicon
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Accurate Monte Carlo simulation of fluorine and BF_2 ion implantation into crystalline silicon

机译：氟和BF_2离子注入晶体硅的精确Monte Carlo模拟

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摘要

Fluorine and molecular boron difluoride (BF_2) ion implantation into crystalline silicon are simulated with binary-collision-approximation (BCA) based Monte Carlo (MC) model and an extensive comparison with experimental data is made. It is shown that with the optimized parameters for boron and fluorine, BF_2 implantation can be accurately predicted without further calibration. It is found that for BF_2 implants, in agreement with experiments, while boron and fluorine have approximately the same projected ranges, fluorine has much deeper channeling tails than boron. It is demonstrated that for deeply channeled implant species fluorine, the Monte Carlo model based on amorphous target assumption could result in gross errors even under the implant conditions which minimize the channeling effect. Based on the accurate Monte Carlo simulation results of fluorine implants, an earlier positron annihilation spectroscopy (PAS) experiment is examined, and it is suggested that the deep vacancy concentration detected by PAS could be a direct consequence of deep channeling behavior of fluorine ions.
机译：利用基于蒙特卡洛（MC）模型的二元碰撞近似（BCA）模拟了氟和分子二氟化硼（BF_2）离子注入晶体硅的过程，并与实验数据进行了广泛的比较。结果表明，利用优化的硼和氟参数，无需进一步校准即可准确预测BF_2的注入。已经发现，对于BF_2植入物，与实验一致，尽管硼和氟具有大致相同的投影范围，但氟具有比硼更深的通道尾部。结果表明，对于深沟渠植入物氟来说，基于非晶目标假设的蒙特卡洛模型即使在将渠化效应最小化的植入条件下也可能导致严重误差。基于精确的氟植入物的蒙特卡洛模拟结果，对较早的正电子an没光谱（PAS）实验进行了研究，并提出PAS检测到的深空位浓度可能是氟离子深通道行为的直接结果。

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