Revisiting the stopping powers of Si and SiO_2 for ~4He ions: 0.5-2.0 MeV

W.N. Lennard; H. Xia; J.K. Kim

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Revisiting the stopping powers of Si and SiO_2 for ~4He ions: 0.5-2.0 MeV

机译：回顾Si和SiO_2对〜4He离子的阻止能力：0.5-2.0 MeV

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摘要

Stopping cross-sections for ~4He ions in both amorphous Si and SiO_2 have been investigated over the energy region 0.5-2.0 MeV using Rutherford backscattering spectrometry (RBS), with special emphasis on the experimental determination of Q x Ω - the charge x solid angle product. The solid angle has been determined via the use of Harwell Series II Bi-implanted Si specimens. We find no significant disagreement with experimental stopping powers reported for amorphous Si. For SiO_2, our results are ～3% smaller than recent measurements. Using Bragg's rule, a functional oxygen stopping cross-section useful for RBS analyses of condensed media targets has been extracted. The reasons for simulating measured pulse height spectra, as distinct from energy spectra, are delineated.

机译：使用Rutherford背散射光谱（RBS）在能量范围0.5-2.0 MeV范围内研究了非晶Si和SiO_2中〜4He离子的终止截面，特别着重于实验测定Q xΩ-电荷x立体角产品。通过使用Harwell Series II双注入Si样品确定了立体角。我们发现与非晶硅报道的实验停止能力没有明显不同。对于SiO_2，我们的结果比最近的测量结果小〜3％。使用布拉格定律，提取了功能性的氧气截止横截面，可用于冷凝介质目标的RBS分析。描述了与能量谱不同的模拟测得的脉冲高度谱的原因。

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来源
《Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms》 |2004年第4期|p.297-307|共11页
作者
W.N. Lennard; H. Xia; J.K. Kim;
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作者单位

Department of Physics and Astronomy, Interface Science Western, The University of Western Ontario, London, ON, Canada N6A 3K7;

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原文格式 PDF
正文语种 eng
中图分类原子核物理学、高能物理学;原子能技术;
关键词
stopping power; silicon dioxide; rutherford backscattering;

机译：停电;二氧化硅;卢瑟福反向散射;

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1. Accurate stopping power measurements for (0.21-2.68) MeV/u ~1H~+ and ~4He~+ ions crossing thin Al foils; extraction of the (I, b) parameters [J] . D. Moussa, S. Damache, S. Ouichaoui Nuclear instruments and methods in physics research . 2015,第jana15期

机译：精确的（0.21-2.68）MeV / u〜1H〜+和〜4He〜+离子穿过薄铝箔的停止功率测量；（I，b）参数的提取
2. Stopping power and energy loss straggling data of Bismuth thin film for (0.9-3.0) MeV ~4He~+ swift ions [J] . Mammeri S., Dib A., Ammi H. Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms . 2019,第Nova15期

机译：（0.9-3.0）MeV〜4He〜+快速离子的铋薄膜的停止功率和能量损耗散失数据
3. EXPERIMENT DESIGN OF SECONDARY NEUTRON AND CHARGED-PARTICLE MEASUREMENT WITH STOPPING TARGETS BOMBARDED BY 100 AND 230 MeV/amu ~4He IONS [J] . PI-EN TSAI, LAWRENCE H. HEILBRONN Nuclear Technology . 2015,第3期

机译：轰击目标为100和230 MeV / amu〜4He离子的二次中子和带电粒子测量的实验设计
4. Stopping powers of titanium for ~4He ions from 1.0 to 20.5 MeV [C] . N. Sakamoto, H. Ogawa, N. Shiomi-Tsuda, International conference on atomic collisions in solids . 1998

机译：从1.0到20.5 mev停止钛的钛〜4he离子
5. Accurate measurements of the collision stopping powers for 5 to 30 MeV electrons. [D] . MacPherson, Miller Shawn. 1998

机译：精确测量5至30 MeV电子的碰撞停止功率。
6. Monte Carlo calculation of the mass stopping power of EBT3 and EBT-XD films for protons for energy ranges of 50–400 MeV [O] . Chengyu Shi, Chin-Cheng Chen, Dennis Mah, -1

机译：蒙特卡洛计算能量范围为50–400 MeV的质子的EBT3和EBT-XD薄膜的质量阻止能力
7. Stopping powers of Al, Cu, Ag and Au media for 1.47 MeV/u $^{127}$I, 2 MeV/u $^{32}$S and $^{79}$Br ions [O] . Ouichaoui, S, Rosier, L H, Hourany, E, 1994

机译：Al，Cu，Ag和Au介质的停止功率为1.47 MeV / u $ ^ {127} $ I，2 MeV / u $ ^ {32} $ S和$ ^ {79} $ Br离子
8. Heavy Ion Stopping at Intermediate Energies. I. Stopping Powers of Solids for /sup 40/Ar and /sup 40/Ca at 20-80 MeV/U [R] . Bimbot, R. , Gauvin, H. , Orliange, I. , 1986

机译：重离子在中间能量停止。 I.阻止/ sup 40 / ar和/ sup 40 / Ca的固体功率为20-80 meV / U.

Revisiting the stopping powers of Si and SiO_2 for ~4He ions: 0.5-2.0 MeV

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