Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry

D. Mangelinck; P.S. Lee; T. Osipowitcz; K.L. Pey

首页> 外文期刊>Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms >Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry

【24h】

Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry

机译：卢瑟福反向散射光谱分析横向不均匀层和亚微米器件

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

A method for analyzing sub-micron devices by Rutherford backscattering spectrometry is presented. Using simplifying assumptions, we are able to simulate the backscattering spectrum of laterally non-uniform samples. The method has been verified with Ni/Pt laterally non-uniform layers on (100)Si substrate and has been applied to characterize the formation of Ni silicide in structures similar to metal oxide semiconductor (MOS) transistors. It is shown that the analysis of devices with a linewidth as low as 0.25 μm is possible using micro RBS and the method of simulation that we have developed.

机译：提出了一种通过卢瑟福反向散射光谱分析亚微米器件的方法。使用简化的假设，我们能够模拟横向非均匀样本的反向散射光谱。该方法已在（100）Si衬底上的Ni / Pt横向不均匀层中得到验证，并已用于表征类似于金属氧化物半导体（MOS）晶体管的结构中硅化镍的形成。结果表明，使用微型RBS和我们开发的仿真方法可以分析线宽低至0.25μm的器件。

著录项

来源
《Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms》 |2004年第4期|p.495-500|共6页
作者
D. Mangelinck; P.S. Lee; T. Osipowitcz; K.L. Pey;
展开▼
作者单位

Laboratoire Materiaux et Microelectronique de Provence (L2MP), CNRS UMR 6137, Case 151, Faculte de saint Jerome, 13397 Marseille Cedex 20, France;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类原子核物理学、高能物理学;原子能技术;
关键词
rutherford backscattering spectrometry; sub-micron devices; MOS; silicide; characterization;

机译：卢瑟福背散射光谱法;亚微米器件;MOS;硅化物;表征;

相似文献

外文文献
中文文献
专利

1. Depth Profiling of Layered Si?O?Al Thin Films with Secondary Ion Mass Spectrometry and Rutherford Backscattering Spectrometry [J] . V. I. Bachurin, N. S. Melesov, A. A. Mironenko, Journal of surface investigation: x-ray, synchrotron and neutron techniques . 2019,第2期

机译：具有二次离子质谱和Rutherford背散射光谱法的深度分析
2. Rutherford Backscattering Spectrometry Analysis of Self-Formed Ti-Rich Interface Layer Growth in Cu(Ti)/Low-k Samples [J] . KAZUYUKI KOHAMA, KAZUHIRO ITO, KENICHI MORI, Journal of Electronic Materials . 2009,第9期

机译：Cu（Ti）/ Low-k样品中自形成的Ti-Rich界面层生长的Rutherford背散射光谱分析
3. Rutherford Backscattering Spectrometry Analysis of Self-Formed Ti-Rich Interface Layer Growth in Cu(Ti)/Low-k Samples [J] . Kazuyuki Kohama, Kazuhiro Ito, Kenichi Mori, Journal of Electronic Materials . 2009,第9期

机译：Cu（Ti）/ Low-k样品中自形成的Ti-Rich界面层生长的Rutherford背散射光谱分析
4. Growth analysis of self-formed Ti-rich interface layers in Cu(Ti)/dielectric-layer samples using Rutherford Backscattering Spectrometry [C] . Kohama K., Ito K., Mori K., Interconnect Technology Conference, 2009. IITC 2009 . 2009

机译：使用卢瑟福反向散射光谱法分析Cu（Ti）/介电层样品中自形成的富Ti界面层的生长
5. Atomic level characterization of cadmium selenide nanocrystal systems using atomic number contrast scanning transmission electron microscopy and Rutherford backscattering spectroscopy. [D] . McBride, James R. 2005

机译：使用原子序数对比扫描透射电子显微镜和卢瑟福背散射光谱技术对硒化镉纳米晶体系统进行原子能级表征。
6. Principal Component Analysis (PCA)-Assisted Time-of-FlightSecondary-Ion Mass Spectrometry (ToF-SIMS): A Versatile Method forthe Investigation of Self-Assembled Monolayers and Multilayers asPrecursors for the Bottom-Up Approach of Nanoscaled Devices [O] . Markus Holzweber, *, Thomas Heinrich, -1

机译：主成分分析（PCA）辅助的飞行时间二次离子质谱（ToF-SIMS）：一种通用的方法自组装单层和多层膜的研究纳米器件自下而上方法的前体
7. Rutherford Backscattering Spectrometry Analysis of Self-Formed Ti-Rich Interface Layer Growth in Cu(Ti)/Low-k Samples [O] . Kohama Kazuyuki, Ito Kazuhiro, Mori Kenichi, 2009

机译：Cu（Ti）/ Low-k样品中自形成的Ti-Rich界面层生长的Rutherford背散射光谱分析
8. Material analysis using combined elastic recoil detection and Rutherford/enhanced Rutherford backscattering spectrometry [R] . Burkhart, J. H. , Barbour, J. C. 1994

机译：使用组合弹性反冲检测和卢瑟福/增强卢瑟福背散射光谱法进行材料分析

Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry

摘要

著录项

相似文献

相关主题

期刊订阅