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首页> 外文期刊>Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms >I-V and deep level transient spectroscopy studies on 60 MeV oxygen ion irradiated NPN transistors
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I-V and deep level transient spectroscopy studies on 60 MeV oxygen ion irradiated NPN transistors

机译：60 MeV氧离子辐照NPN晶体管的I-V和深能级瞬态光谱研究

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摘要

NPN transistors have been irradiated by 60 MeV oxygen ions in a fluence ranging from 5 x 10~(10) to 1 x 10~(13) ions/cm~2. The DC current gain (h_(FE)), excess base current (ΔI_B = I_(B post)-I_(B pre), excess collector current (ΔI_C = I_(Cpost)- I_(C pre)) and collector saturation current (I_(C Sat)) of the ion irradiated transistors Were studied systematically. The h_(FE) of the transistors were found to be decreased drastically after ion irradiation. A significant increase has been observed in the collector current (I_C) along with the increase in the base current (I_B) after ion irradiation. The I_(C Sat) of the ion irradiated transistors were also decreased significantly after irradiation. The radiation induced trap levels in the collector base depletion region of NPN transistors were studied by deep level transient spectroscopy technique and different types of trap levels were observed. The results obtained on the activation energy, density of trap levels, apparent capture cross section, introduction rate and space charge layer lifetime of different defects for different total fluence are presented and discussed.
机译：NPN晶体管已被60 MeV氧离子辐照，通量范围为5 x 10〜（10）至1 x 10〜（13）离子/ cm〜2。直流电流增益（h_（FE）），过大的基极电流（ΔI_B= I_（B post）-I_（B pre），过大的集电极电流（ΔI_C= I_（Cpost）-I_（C pre））和集电极饱和电流对离子辐照晶体管的（I_（C Sat））进行了系统研究，发现离子辐照后晶体管的h_（FE）大大降低，集电极电流（I_C）随电流的增加而显着增加。离子辐照后基极电流（I_B）的增加；离子辐照后晶体管的I_（C Sat）也显着降低；通过深能级瞬态研究了NPN晶体管集电极基极耗尽区中辐射诱发的陷阱能级观察了不同的陷阱能级，利用光谱学技术观察了不同缺陷的活化能，陷阱能级密度，表观俘获截面，引入速率和空间电荷层寿命。讨论过。

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