Molecular size effect in the chemical sputtering of a-C:H thin films by low energy H~+ H_2~+, and H_3~+ ions

P.R. Harris; F.W. Meyer; W. Jacob; T. Schwarz-Selinger; U. von Toussaint

首页> 外文期刊>Nuclear Instruments & Methods in Physics Research >Molecular size effect in the chemical sputtering of a-C:H thin films by low energy H~+ H_2~+, and H_3~+ ions

【24h】

Molecular size effect in the chemical sputtering of a-C:H thin films by low energy H~+ H_2~+, and H_3~+ ions

机译：低能H〜+ H_2〜+和H_3〜+离子化学溅射a-C：H薄膜时的分子尺寸效应

获取原文

获取原文并翻译 | 示例

获取外文期刊封面封底 >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We have experimentally determined total carbon yields per incident H atom in the energy range 36-300 eV/H for H~+, H_2~+, and H+3~+ projectiles incident normally on ~60 nm thick a-C:H films, using 2-D ellips-ometry determination of erosion crater volumes ex vacuo, the separately characterized thin film carbon density, and the incident beam current integration accumulated on target during the crater evolution. During each beam exposure, methane production was monitored using in situ quadrupole mass spec-trometry (QMS). The present total carbon yields/H for incident H_3~+ ions obtained via ellipsometry are in agreement with total mass loss measurements for H_3~+ by Balden and Roth [1] over the investigated energy range. The observed methane production per incident H for the molecular ions exhibits molecular size effects over the entire energy range investigated, confirming the trend observed in the ellipsometry-based total C yields/H.

机译：我们已经通过实验确定了正常情况下入射到〜60 nm厚aC：H薄膜上的H〜+，H_2〜+和H + 3〜+弹丸的每个入射H原子在36-300 eV / H能量范围内的总碳产率。二维椭圆度测定法可在真空条件下确定侵蚀坑的体积，单独表征的薄膜碳密度以及在坑演化过程中累积在目标上的入射束电流积分。在每次射线照射期间，使用原位四极质谱（QMS）监测甲烷的产生。通过椭圆偏光法获得的入射H_3〜+离子的当前总碳收率/ H与Balden和Roth [1]在研究的能量范围内对H_3〜+的总质量损失测量相一致。观察到的分子离子每次入射H产生的甲烷产量在所研究的整个能量范围内均表现出分子大小效应，从而证实了基于椭圆偏振法的总C产率/ H的趋势。

著录项

来源
《Nuclear Instruments & Methods in Physics Research》 |2011年第11期|p.1276-1279|共4页
作者
P.R. Harris; F.W. Meyer; W. Jacob; T. Schwarz-Selinger; U. von Toussaint;
展开▼
作者单位

Physics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6372, USA;

Physics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6372, USA;

Max-Planck-Institut fur Plasmaphysik, EURATOM Association, Boltzmannstr. 2, 85748 Carching, Germany;

Max-Planck-Institut fur Plasmaphysik, EURATOM Association, Boltzmannstr. 2, 85748 Carching, Germany;

Max-Planck-Institut fur Plasmaphysik, EURATOM Association, Boltzmannstr. 2, 85748 Carching, Germany;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词
sputtering; ion-surface collisions; chemical erosion; carbon-based materials; divertor materials; a-c:h thin films;

机译：溅射离子表面碰撞;化学腐蚀碳基材料;分流器材料;a-c：h薄膜;

相似文献

外文文献
中文文献
专利

1. Densification of thin a-C : H films grown from low-kinetic energy hydrocarbon radicals under the influence of H and C particle fluxes: a molecular dynamics study [J] . Neyts E, Bogaerts A, van de Sanden MCM Journal of Physics, D. Applied Physics: A Europhysics Journal . 2006,第9期

机译：低动能烃自由基在H和C粒子通量的影响下生长的a-C：H薄膜的致密化：分子动力学研究
2. Composition and chemical structure of ultra-thin a-C:F films deposited by RF magnetron sputtering with high pulsed bias [J] . Guangze Tang, Xinxin Ma, Mingren Sun Diamond and Related Materials . 2007,第8期

机译：高脉冲偏压射频磁控溅射沉积超薄a-C：F薄膜的组成和化学结构
3. Molecular dynamics Simulations of the growth of thin a-C : H films under additional ion bombardment: Influence of the growth species and the Ar+ ion kinetic energy [J] . Neyts E, Eckert M, Bogaerts A Chemical vapor deposition: CVD . 2007,第6a7期

机译：附加离子轰击下a-C：H薄膜生长的分子动力学模拟：生长种类和Ar +离子动能的影响
4. Influences of N_2 and H_2 gas flow rates on properties of n-type nanocrystalline 3C-SiC:H thin films prepared by hot-wire chemical vapor deposition [C] . Akimori Tabata, Yoshiki Hoshide, Akihiro Kondo EuroCVD 17/CVD 17 . 2009

机译：N_2和H_2气体流量对热线化学气相沉积制备n型纳米晶3C-SiC：H薄膜性能的影响
5. Application of diamond films to electric propulsion: Low energy sputter yield measurement and MPD plasma assisted chemical vapor deposition. [D] . Blandino, John Joseph. 2001

机译：金刚石薄膜在电推进中的应用：低能量溅射产率测量和MPD等离子体辅助化学气相沉积。
6. High Quality Graphene Thin Films Synthesized by Glow Discharge Method in A Chemical Vapor Deposition System Using Solid Carbon Source [O] . Le Wang, Jie Sun, Weiling Guo, 2020

机译：固体碳源化学气相沉积系统中辉光放电法合成的高质量石墨烯薄膜
7. Molecular size effect in the chemical sputtering of a-C:H thin films by low energy H+, , and ions [O] . P.R. Harris, F.W. Meyer, W. Jacob, 2011

机译：低能H + ，H _{2 + 和H _{3化学溅射aC：H薄膜时的分子尺寸效应 + 离子}}

Molecular size effect in the chemical sputtering of a-C:H thin films by low energy H~+ H_2~+, and H_3~+ ions

摘要

著录项

相似文献

相关主题

期刊订阅