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《先进制造进展：英文版》
>Effects of HfO_2 buffer layers on the dielectric property and leakage current of Ba_(0.6)Sr_(0.4)TiO_3 thin films by pulsed laser deposition
Effects of HfO_2 buffer layers on the dielectric property and leakage current of Ba_(0.6)Sr_(0.4)TiO_3 thin films by pulsed laser deposition
Ba0.6Sr0.4TiO3 (BST) thin films with and without HfO 2 buffer layer were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Dependences of HfO 2 thickness on the dielectric property and leakage current of BST thin films were focused. The dielectric constant of BST thin films increased and then decreased with the increase of HfO 2 thickness, while the dielectric relaxation was gradually improved. The loss tangent and leakage current under positive bias decreased with the HfO 2 thickness increasing. The leakage current analysis based on the Schottky emission indicated an improvement of the BST/Pt interface with HfO 2 buffer layer. The loss tangent, tunability and figure of merit of optimized HfO 2 buffered BST thin film achieved 0.009 8, 21.91% (E max = 200 kV/cm), 22.40 at 10 6 Hz, respectively.
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