以Hummer法制备的氧化石墨烯为前驱体,选用硫为掺杂元素,采用水热法制备了硫掺杂三维石墨烯电极材料(CS材料).通过SEM、BET等表征方法分析了该材料的微观形貌及孔径分布;并重点研究了在不同掺杂剂比例下制备的CS材料的电化学性能.结果表明CS材料的比表面积为378.45 m2/g,其孔径主要分布在2~5 nm之间;当硫碳质量比为0.25:1时,CS材料的电化学性能最佳,其等效串联电阻仅为2.54 Ω,比容量高达134.7 F/g (0.1 A/g),即使电流密度倍增10倍(1 A/g),其比容量仍可达到89 F/g.该方法具有成本低、安全等优点,所制备的硫掺杂三维石墨烯在超级电容器中具有良好的应用前景.%In this paper, with graphene oxide prepared by the Hummer method as a precursor and sulfur as a doping element, a sulfur-doped three-dimensional graphene electrode material (CS material) was prepared by adopting a hydrothermal method. By means of SEM, BET and other characterization methods, the microtopography and aperture distribution of the material were analyzed; and a focused research was performed on the electrochemical properties of the CS material prepared under different dopant proportions. The result shows that the specific surface area of the CS material is 378.45 m2/g, and the apertures are mainly distributed in 2-5 nm. When the mass ratio of sulfur to carbon is 0.25:1, the electrochemical properties of the CS material are optimal. The equivalent series resistance thereof is merely 2.54 omega, and the specific capacity is up to 134.7 F/g(0.1 A/g), which can reach to 89 F/g even if the current density doubles for 10 times (1 A/g). With the advantages of low cost and safety, the prepared sulfar-doped three-dimensional graphene has a good application prospect.
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