Properties of Seamless W Sub-Micro Electrode Used for Phase Change Memory

FENG Gao-Ming; SONG Zhi-Tang; LIU Bo; FENG Song-Lin; WAN Xu-Dong

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Properties of Seamless W Sub-Micro Electrode Used for Phase Change Memory

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摘要

In order to improve the reliability of C-RAM devices, a seamless sub-micro W heating electrode in diameter 260 nm is fabricated with standard 0.18 μm CMOS processing line. Then we successfully manufacture a chalcogenide random access memory device using this seamless sub-micro W heating electrode. The results show good electrical performance, e.g. the reset current of 1.3mA and the set/reset cycle up to 109 have been achieved.

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《中国物理快报：英文版》 |2008年第6期|2289-2291|共3页
作者
FENG Gao-Ming; SONG Zhi-Tang; LIU Bo; FENG Song-Lin; WAN Xu-Dong;
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作者单位

Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050;

Graduate School of the Chinese Academy of Sciences, Belting 100049;

Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050;

Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050;

Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050;

Semiconductor Manufacture International Corporation Shanghai, 18 Zhangjiang Road, Shanghai 200050;

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中图分类物理学;
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Properties of Seamless W Sub-Micro Electrode Used for Phase Change Memory

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