首页> 中文期刊> 《中国物理快报:英文版》 >Significant Improvement of Organic Thin-Film Transistor Mobility Utilizing an Organic Heterojunction Buffer Layer

Significant Improvement of Organic Thin-Film Transistor Mobility Utilizing an Organic Heterojunction Buffer Layer

         

摘要

High-mobility vanadyl phthalocyanine(VOPc)/5,5"'−bis(4-fluorophenyl)-2,2':5',2":5",2"'−quaterthiophene(F2-P4T)thin-film transistors are demonstrated by employing a copper hexadecafluorophthalocyanine(F16CuPc)/copper phthalocyanine(CuPc)heterojunction unit,which are fabricated at different substrate temperatures,as a buffer layer.The highest mobility of 4.08 cm^(2)/Vs is achieved using a F16CuPc/CuPc organic heterojunction buffer layer fabricated at high substrate temperature.Compared with the random small grain-like morphology of the room-temperature buffer layer,the high-temperature organic heterojunction presents a large-sized fiber-like film morphology,resulting in an enhanced conductivity.Thus the contact resistance of the transistor is significantly reduced and an obvious improvement in device mobility is obtained.

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