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毛维; 张进成; 薛军帅; 郝跃; 马晓华; 王冲; 刘红侠; 许晟瑞; 杨林安; 毕志伟; 梁晓祯; 张金风; 匡贤伟;
Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices;
Xidian University Xi'an 710071;
HEMT器件; 原子层沉积; MOS管; 栅介质; Al2O3; 器件特性; 超薄; 高电子迁移率晶体管;
机译:Effect of deuterium postmetal annealing on the reliability characteristics of an atomic-layer-deposited HfO2/SiO2 stack gate dielectrics
机译:Characteristics of ZrO2 gate dielectric deposited using Zr t-butoxide and Zr(NEt2)(4) precursors by plasma enhanced atomic layer deposition method
机译:Characteristics of ZrO_(2) gate dielectric deposited using Zr t-butoxide and Zr(NEt_(2))_(4) precursors by plasma enhanced atomic layer deposition method
机译:LOW-TEMPERATURE EMISSIVITY OF THIN AL2O3 LAYERS DEPOSITED ON COPPER SUBSTRATE
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