O x d e p - n j u n c t i o n s o f p - S r 我 n 0.1 T i 0.9 O 3 / n - S r N b 0.01 T i 0.99 O 3 ( S 我 T O / S N T O ) r efabricatedbylasermolecularbeamepitaxy 。Thecurrent-voltagecharacteristicsoftheSITO/SNTOp-njunctionareinvestigatedmainlyinthetemperaturerangeof300-400K。TheSITO/SNTOjunctionexhibitedgoodrectifyingbehaviouroverthewholetemperaturerange。Ourresultsindicateapossibilityofapplicationofoxidep-njunctioninhighertemperaturesinfutureelectronicdevices。
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机译：Investigation of the Electronic and Structural Properties of Potassium Hexaboride,KB_6,by Transport,Magnetic Susceptibility,EPR,and NMR Measurements,Temperature-Dependent Crystal Structure Determination,and Electronic Band Structure Calculations
机译：利用扫描穿隧显微镜探讨在硒化铟上未氧化表面和氧化表面之介面接合处的电子特性 =Scanning Tunneling Microscope study of InSe Surface Electronic Properties at the Fresh/Oxided Interface Junction
