The photocurrent effect in reverse biased p-n silicon waveguides at wavelength 1550 nm is experimentally investigated.The photocurrent,which is mainly related to surface-state absorption,defect-state absorption and/or two-photon absorption,is more than 0.08µA/mm under 8 V reverse biasing and 0.75 mW irradiation.The responsivity of a silicon waveguide with length of 4500µm achieves 0.5 mA/W.Moreover,the enhancement of the photocurrent effect under the electric field is discussed.
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