We have identified three kinds of hydrogen-related(HR)irradiated defects in Si crystals grown in H atmosphere.They are located at 0.08eV and 0.20eV below the conduction band and 0.l0eV above the valance band respectively.Because they have different annealing temperatures,they are not the different charged states of the same defect center but correspond to different centers.
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机译：Annealing-temperature-dependent evolution of hydrogen-related donor and its strong correlation with X-photoluminescence center in proton-irradiated silicon
