Structural Analysis of In xGa1−xN/GaN MQWs by Different Experimental Methods

丁斌峰; 潘峰; 冯哲川; 法涛; 成枫锋; 姚淑德

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Structural Analysis of In xGa1−xN/GaN MQWs by Different Experimental Methods

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Structural properties of InxGa_(1−x)N/GaN multi-quantum wells(MQWs)grown on sapphire by metal organic chemical vapor deposition are investigated by synchrotron radiation x-ray diffraction(SRXRD),Rutherford backscattering/channelling(RBS/C)and high-resolution transmission electron microscopy.The sample consists of eight periods of InxGa_(1−x)N/GaN wells of 2.1 nm thickness and 8.5 nm thickness of GaN barrier,and the results are very close,which verifies the accuracy of the three methods.The indium content in InxGa_(1−x)N/GaN MQWs by SRXRD and RBS/C is estimated,and results are in general the same.By RBS/C random spectra,the indium atomic lattice substitution rate is 94.0%,indicating that almost all indium atoms in InxGa_(1−x)N/GaN MQWs are at substitution,that the indium distribution of each layer in InxGa_(1−x)N/GaN MQWs is very homogeneous and that the InxGa_(1−x)N/GaN MQWs have a very good crystalline quality.It is not accurate to estimate indium content in InxGa_(1−x)N/GaN MQWs by photoluminescence(PL)spectra,because the result from the PL experimental method is very different from the results by the SRXRD and RBS/C experimental methods.

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来源
《中国物理快报：英文版》 |2011年第7期|305-308|共4页
作者
丁斌峰; 潘峰; 冯哲川; 法涛; 成枫锋; 姚淑德;
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作者单位

State Key Laboratory of Nuclear Physics and Technology;

Peking University;

Beijing 100871;

Department of Physics and Electronic Information;

Langfang Teachers College;

Langfang 065000;

Department of Physics;

Shaanxi University of Technology;

Hanzhong 723001;

Institute of Photonics&Optoelectronics and Department of Electrical Engineering;

National Taiwan University;

Taipei 10617;

China;

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原文格式 PDF
正文语种 chi
中图分类半导体技术;
关键词
N/Ga; MQWs; sapphire;

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Structural Analysis of In xGa1−xN/GaN MQWs by Different Experimental Methods

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