SiC:Er_(2)O_(3) films with different ratios of SiC to SiC:Er_(2)O_(3) are deposited on p−type Si substrates by the magnetron co-sputtering technique,which was fully compatible with current Si processing technologies.Intense room temperature 1.54µm photoluminescence(PL)from Er3+ions in the SiC:Er_(2)O_(3) films is observed and the PL intensity at 1.54µm is enhanced by about 40 times with increasing Er concentration in the films from 0.8 to 22 at.%under both direct and indirect excitations.The 1.54µm electroluminescence from the structure of indium tin oxide(ITO)/n+−Si/SiC:Er_(2)O_(3)/p−Si with suitable ratios of SiC to SiC:Er_(2)O_(3)is measured under forward biases.
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