Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure

刘胜厚; 蔡勇; 龚孺敏; 王金延; 曾春红; 时文华; 冯志红; 王晶晶; 尹甲运; 文正; 秦华; 张宝顺

首页> 中文期刊> 《中国物理快报：英文版》 >Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure

Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure

开具论文收录证明 >>

期刊封面封底目录下载 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

A nano-channel array(NCA)structure is applied to realize enhancement-mode(E-mode)AlGaN/GaN high-electron mobility transistors(HEMTs).The fabricated NCA-HEMT,consisting of 1000 channels connected in parallel with a channel width of 64 nm,shows a threshold voltage of 0.15 V and a subthreshold slope of 78 mV/dec,compared to−3.92 V and 99 mV/dec for a conventional HEMT(C-HEMT),respectively.Both the NCA-HEMT and C-HEMT show similar gate leakage current,indicating no significant degradation in gate leakage characteristics for the NCA-HEMT.The surrounding-field effect and relieved polarization contribute to the very large positive threshold voltage shift,while the work function difference makes it positive.

著录项

来源
《中国物理快报：英文版》 |2011年第7期|265-267|共3页
作者
刘胜厚; 蔡勇; 龚孺敏; 王金延; 曾春红; 时文华; 冯志红; 王晶晶; 尹甲运; 文正; 秦华; 张宝顺;
展开▼
作者单位

Suzhou Institute of Nano-tech and Nano-bionics;

Chinese Academy of Sciences;

Suzhou 215125;

Institute of Microelectronics;

Peking University;

Beijing 100871;

Science and Technology on ASIC Lab;

Hebei Semiconductor Research Institute;

Shijiazhuang 050051;

Key Laboratory of Nanodevice and Application;

Suzhou Institute of Nano-tech and Nano-bionics;

Chinese Academy of Sciences;

Suzhou 215125;

展开▼
原文格式 PDF
正文语种 chi
中图分类半导体技术;
关键词
AlGaN/GaN; polarization; channel;

相似文献

中文文献
外文文献
专利

1. Effect of Depletion Layer on the Total Mobility of AIGaN/GaN High Electron Mobility Transistors [J] . Rajab Yahyazadeh ,Zahra Hashempour . 材料科学与工程：中英文B版 . 2011,第6期
2. Intrinsic Limits of Electron Mobility in Modulation-Doped AlGaN/GaN 2D Electron Gas by Phonon Scattering [J] . Liang Pang . 电子科技学刊 . 2014,第4期
3. Effect of Temperature on the Electronic Current of AIGaN/GaN High Electron Mobility Transistors （HEMT） [J] . Rajab Yahyazadeh ,Zahra Hashempour . 材料科学与工程：中英文版 . 2011,第2期
4. p型NiO栅极对AlGaN/GaN型NiO栅极对AlGaN/GaN HFET阈值电压的调控研究 [C] . 王文静 ,李柳暗 ,张佳琳 . 第二届全国宽禁带半导体学术会议 . -1
5. AlGaN/GaN/AlGaN/GaN双异质结场效应晶体管中极化库仑场散射机制研究 [A] . 郝笑寒 . 2018

Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure

摘要

著录项

相似文献

相关主题

期刊订阅