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《中国物理快报：英文版》
>Peripheral Ferroelectric Domain Switching and Polarization Fatigue in Nonvolatile Memory Elements of Continuous Pt/SrBi_(2)Ta_(2)O_(9)/Pt Thin-Film Capacitors
Peripheral Ferroelectric Domain Switching and Polarization Fatigue in Nonvolatile Memory Elements of Continuous Pt/SrBi_(2)Ta_(2)O_(9)/Pt Thin-Film Capacitors
We verify the domain sideway motion around the peripheral regions of the crossed capacitors of top and bottom electrode bars without electrode coverage.To avoid the crosstalk problem between adjacent memory cells,the safe distance between adjacent elements of Pt/SrBi_(2)Ta_(2)O_(9)/Pt thin−film capacitors is estimated to be 0.156µm.Moreover,the fatigue of Pt/SrBi_(2)Ta_(2)O_(9)/Pt thin-film capacitors is independent of the individual memory size due to the absence of etching damage.
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