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Integrated beam-steered optical switch

机译:集成光束转向光开关

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摘要

We report an optical switch that is based on the beam steering of an optical waveguide formed by injection of electrons in a p-i-n slab waveguide structure. The structure consists of an undoped InGaAsP multiple quantum well (MQW) layer, with a total thickness of 0.28 μm that is sandwiched between n-doped InP cladding layers. Zinc is diffused into the top cladding layer through a silicon nitride mask to form the p-regions on top of which a pair of 10 μm wide parallel titanium-zinc-gold contact stripes are deposited by evaporation and lift-off. The gap between the stripes is 20μm wide and the device is cleaved to a length of 800 μm. Electrical currents are injected through the electrodes and a laser beam is launched into the middle of the gap region. The injected electrons accumulate in the MQW layer and spread sideways by diffusion. The regions that are saturated with electrons experience a decrease in refractive index and surround a narrow high index region effectively forming a channel waveguide. By carefully controlling the current ratio through the two parallel stripes, the waveguide can be shifted, thereby steering the guided laser beam.
机译:我们报告了一种基于通过在P-I-N板波导结构中注射电子形成的光波导的光束转向的光学开关。该结构由未掺杂的InGaASP多量子阱(MQW)层组成,总厚度为0.28μm,其夹在N掺杂的INP覆层层之间。锌通过氮化硅掩模扩散到顶部包层层中以形成顶部的p区,其中一对10μm宽平行的钛 - 锌 - 金接触条纹通过蒸发和剥离沉积。条纹之间的间隙为20μm宽,并且该装置切割成800μm的长度。通过电极注入电流,并且将激光束发射到间隙区域的中间。注入的电子在MQW层中积聚并通过扩散侧向扩散。用电子饱和的区域经历折射率的降低,并围绕有效地形成通道波导的窄高指数区域。通过小心地通过两个平行条纹控制电流比,可以移动波导,从而转向导向激光束。

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