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High Performance Phase and Amplitude Modulators Based on GaInAsP Stepped Quantum Wells

机译:基于GAIAPAPP阶梯式量子阱的高性能相和幅度调制器

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摘要

Enhanced electrooptic coefficient of GalnAsP three-step quantum wells (3SQW) for high power electrorefraction modulator applications is reported. Measured electrooptic coefficient of the 3SQW is nearly three times higher than the conventional rectangular quantum well (RQW) at λ = 1.55 μm. Higher electrooptic effect, combined with a low optical absorption coefficient α < l cm~(-1) in the 3SQW increased the modulator figure of merit by nearly 53 times, and decreased the power consumption by nearly one order of magnitude compared with a conventional RQW design.
机译:报道了高功率电渗漏调制器应用的GalnASP三步量子孔(3SQW)的增强的电光系数。 3SQW的测量电光系数比在λ=1.55μm处的传统矩形量子阱(RQW)高几乎三倍。较高的电光效果,与3SQW中的低光学吸收系数α

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