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InGaAsP/InP quantum- well electrorefractive modulators with sub-volt V_π

机译：IngaASP / InP量子 - 具有子伏v_π的电阻电霜调制器

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Advanced analog-optical sensor, signal processing and communication systems could benefit significantly from wideband (DC to > 50 GHz) optical modulators having both low half-wave voltage (V_π) and low optical insertion loss. An important figure-of-merit for modulators used in analog applications is T_(MAX)/V_π, where T_(MAX) is the optical transmission of the modulator when biased for maximum transmission. Candidate electro-optic materials for realizing these modulators include lithium niobate (LiNbO_3), polymers, and semiconductors, each of which has its own set of advantages and disadvantages. In this paper, we report the development of 1.5-μm-wavelength Mach-Zehnder modulators utilizing the electrorefractive effect in InGaAsP/InP symmetric, uncoupled semiconductor quantum-wells. Modulators with 1-cm-long, lumped-element electrodes are found to have a push-pull V_π of 0.9V (V_πL = 9 V-mm) and 18-dB fiber-to-fiber insertion loss (T_(MAX)/V_π = 0.018). Fabry-Perot cutback measurements reveal a waveguide propagation loss of 7 dB/cm and a waveguide-to-fiber coupling loss of 5 dB/facet. The relatively high propagation loss results from a combination of below-bandedge absorption and scattering due to waveguide-sidewall roughness. Analyses show that most of the coupling loss can be eliminated though the use of monolithically integrated inverted-taper optical-mode converters, thereby allowing these modulators to exceed the performance of commercial modulators (T_(MAX)/V_π ～ 0.1). We also report the analog modulation characteristics of these modulators.
机译：先进的模拟光学传感器，信号处理和通信系统可以从宽带（DC至> 50 GHz）光调制器具有低半波电压（V_π）和低光插入损耗的光学调制器显着益处。模拟应用中使用的调制器的重要型号是T_（MAX）/V_π，其中T_（MAX）是在偏置最大传输时调制器的光学传输。用于实现这些调节剂的候选电光材料包括铌酸锂（LINBO_3），聚合物和半导体，每个聚合物和半导体都有其自身的优点和缺点。在本文中，我们报道了利用InGaASP / INP对称，非象限的半导体量子阱中的电流效果的1.5微米波长马赫曲线调制器的开发。发现具有1厘米长的集成元件电极的调制器具有0.9V（V_π1= 9V-MM）和18-DB光纤到光纤插入损耗的推拉V_π（T_（MAX）/V_π = 0.018）。 Fabry-Perot削减测量显示波导传播损耗为7dB / cm，波导到光纤耦合损耗为5dB /张。由于波导 - 侧壁粗糙度，与下面的BandEde吸收和散射的组合相对高的传播损失。分析表明，尽管使用单片集成的倒锥光模式转换器，但是可以消除大多数耦合损耗，从而允许这些调制器超过商业调制器的性能（t_（max）/v_π〜0.1）。我们还报告了这些调制器的模拟调制特征。

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