Type-II interband cascade (IC) lasers take advantage of the broken-gap alignment in type-II quantum wells to reuse electrons for sequential photon emissions from serially connected active regions. Here, we describe recent advances in InAs/GaInSb type-II IC lasers at emission wavelengths of 3.6-4 mum; these semiconductor lasers have exhibited significantly higher differential quantum efficiencies and peak powers than previously reported. Low threshold current densities (e.g., approx56 A/cm~2 at 80 K) and power efficiency exceeding 9percent were observed from a mesa-stripe laser in cw operation. Also, these lasers were able to operate at temperatures up to 250 K in pulsed mode and 127 K in cw mode. We observed from several devices at temperatures above 80 K, slope efficiencies exceeding 1 W/A/facet, corresponding to a differential external quantum efficiency exceeding 600percent. A peak optical output power of approx 6 W/facet was observed from a type-II IC laser at 80 K.
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机译：II型球间级联（IC）激光器利用II型量子孔中的破裂间隙对准，以重用来自串联连接的有源区的顺序光子发射的电子。在这里，我们描述了3.6-4妈咪的发射波长的INAS / GAINTB II II IC激光器的最新进展;这些半导体激光器表现出比先前报道的显着更高的差分量子效率和峰值功率。低阈值电流密度（例如，在80 k处的大约56a / cm〜2）和从CW操作中的台面条纹激光观察到超过9平方的功率效率。而且，这些激光器能够在脉冲模式下高达250 k的温度和CW模式下的127 k。我们从高于80 k的温度观察到的几个装置，超过1W / A的坡度效率，对应于超过600平方的差分外部量子效率。从80K的II型IC激光器观察到大约6W /突起的峰值光输出功率。
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