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首页> 外文会议>Conference on enabling photonic technologies for aerospace applications >Modulation Doped InGaAsP QW Laser Emitting at 1.55mum
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Modulation Doped InGaAsP QW Laser Emitting at 1.55mum

机译：调制掺杂InGaASP QW激光在1.55mum下发射

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摘要

A number of parameters, such as gain, modulation response, linewidth enhancement factor and relative intensity noise in modulation-doped InGaAsP QW laser emitting at 1.55 mum have been theortically investigated. The results indicate that the relaxation oscillation frequency for p-type modulation doped QW laser is enhanced by a factor of more than 2 compared to that for undoped MQW lasers, the linewidth enhancement factor of p-type modulation doped QW laser is reduced to 1/5 of that of undoped MQW laser and the relative intensity noise (RIN) is reduced by a factor of > 10 dB compared to that for undoped MQW lasers.
机译：在1.55毫米的调制掺杂InGaASP QW激光器中发出的许多参数，例如增益，调制响应，线宽增强因子和相对强度噪声已经进行了测量。结果表明，与未掺杂的MQW激光相比，P型调制掺杂QW激光器的宽松振荡频率增强了超过2的倍数，p型调制掺杂QW激光器的线宽增强因子减少到1 /与未掺杂的MQW激光器相比，未掺杂的MQW激光器和相对强度噪声（RIN）的5减少了一个> 10dB的倍数。

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